KDS4148U_09 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
KDS4148U
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : USC.
Low Forward Voltage.
Fast Reverse Recovery Time.
Small Total capacitance.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
V_RM
100
V_R
75
I_FM
450
I_O
150
I_FSM
2
P_D*
200
T_j
150
Storage Temperature Range
T_stg
-55 150
* : Mounted on a glass epoxy circuit board of 20 20 ,
Pad dimension of 4 4 .
UNIT
V
V
mA
mA
A
mW
B
G
1
H
2
D
J
C
I
M
M
1. ANODE
2. CATHODE
DIM MILLIMETERS
A
2.50+_ 0.1
B
1.25+_ 0.05
C
0.90 +_ 0.05
D 0.30+0.06/-0.04
E
1.70+_ 0.05
F
MIN 0.17
G
0.126+_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15+_ 0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
Marking
Lot No.
Type Name
UH
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
V_R=75V
V_R=0V, f=1MHz
I_F=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
2.0
4.0
UNIT
V
A
pF
nS
2009. 3. 25
Revision No : 3
1/2