KDS221E_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
hSmall Package : ESM.
hLow Forward Voltage : V_F=1.0V (Max.).
KDS221E
SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
V_RM
Reverse Voltage
V_R
Maximum (Peak) Forward Current
I_FM
Average Forward Current
I_O
Surge Current (1Ǻs)
I_FSM
Power Dissipation
P_D
Junction Temperature
T_j
Storage Temperature Range
T_stg
Note : * Unit Rating. Total Rating=Unit Rating x 0.7
RATING
20
20
200 *
100 *
300 *
100
150
-55q150
UNIT
V
V
mA
mA
mA
mW


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
TEST CONDITION
I_F=10mA
V_R=15V
MIN.
-
-
TYP.
-
-
MAX.
1.0
0.1
UNIT
V
ǺA
2014. 3. 31
Revision No : 1
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