KDS221E Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : ESM.
Low Forward Voltage : V_F=1.0V (Max.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
V_RM
Reverse Voltage
V_R
Maximum (Peak) Forward Current
I_FM
Average Forward Current
I_O
Surge Current (1 s)
I_FSM
Power Dissipation
P_D
Junction Temperature
T_j
Storage Temperature Range
T_stg
Note : * Unit Rating. Total Rating=Unit Rating x 0.7
RATING
20
20
200 *
100 *
300 *
100
150
-55 150
UNIT
V
V
mA
mA
mA
mW
KDS221E
SILICON EPITAXIAL PLANAR DIODE
E
B
DIM MILLIMETERS
A
1.60 +_ 0.10
2
D
B
0.85+_ 0.10
1
3
C
0.70 +_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00 +_ 0.10
H
0.50
J
0.13+_ 0.05
J
1. CATHODE 1
2. ANODE 2
3. ANODE 1 / CATHODE 2
3
2
1
ESM
Marking
DS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
TEST CONDITION
I_F=10mA
V_R=15V
MIN.
-
-
TYP.
-
-
MAX.
1.0
0.1
UNIT
V
A
2003. 10. 22
Revision No : 0
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