KDS187_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
hSmall Package : SOT-23.
hLow Forward Voltag : V_F=0.92V(Typ.).
hFast Reverse Recovery Time : t_rr=1.6ns(Typ.).
hSmall Total Capacitance : C_T=2.2pF(Typ.).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_RM
V_R
I_FM
I_O
I_FSM
P_D
T_j
T_stg
RATING
85
80
300
100
2
150
150
-55q150
UNIT
V
V
mA
mA
A
mW


KDS187
SILICON EPITAXIAL PLANAR DIODE
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. NC
2. CATHODE
3. ANODE
3
2
1
SOT-23
Marking
D3 ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
t_rr
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
V_R=80V
V_R=0, f=1MHz
I_F=10mA
MIN.
-
-
-
-
-
-
TYP.
0.61
0.74
0.92
-
2.2
1.6
MAX.
-
-
1.20
0.5
4.0
4.0
UNIT
V
ǺA
pF
nS
2011. 12. 23
Revision No : 2
1/2