KDS166F Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small package : TFSV.
Low forward voltage.
Fast reverse recovery time.
Small total capacitance.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
* : Unit rating. Total rating=unit rating
SYMBOL RATING
V_RM
85
V_R
80
I_FM
300
I_O
100
I_FSM
2
P_D *
100
T_j
150
T_stg
-55 150
1.5
UNIT
V
V
mA
mA
A
mW
KDS166F
SILICON EPITAXIAL PLANAR DIODE
B
B1
DIM
A
A1
B
B1
C
D
H
T
MILLIMETERS
1.0+_ 0.05
0.7+_ 0.05
1.0+_ 0.05
0.8+_ 0.05
0.35
0.15+_ 0.05
0.38+0.02/-0.04
0.1+_ 0.05
1. ANODE 1
2. N.C
3. ANODE 2
4. CATHODE 2
5. CATHODE 1
TFSV
Marking
5
4 ^{Lot No.}
SC
12 3
D1 D2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
V_R=80V
V_R=0V, f=1MHz
I_F=10mA
2006. 1. 13
Revision No : 0
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
UNIT
V
A
pF
ns
1/2