KDS165T_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
hLow Forward Voltage.
hFast Reverse Recovery Time.
hSmall Total Capacitance.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
V_RM
85
Reverse Voltage
V_R
80
Maximum (Peak) Forward Current
I_FM *
300
Average Forward Current
I_O *
100
Surge Current (10ms)
I_FSM *
2
Power Dissipation
P_D **
900
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
* : Unit Rating. (Total Rating=Unit Ratingƒ1.5)
** : Total rating, Package mounted on a ceramic board (600ɛƒ0.8ɘ)
UNIT
V
V
mA
mA
A
mW


KDS165T
SILICON EPITAXIAL PLANAR DIODE
E
B
1
4
2
3
DIM MILLIMETERS
A
2.9+_ 0.2
B
1.6+0.2/-0.1
C
0.70+_ 0.05
D
0.4+_ 0.1
E
2.8+0.2/-0.3
F
1.9+_ 0.2
G
0.16 +_ 0.05
H
0.00-0.10
I
0.25+0.3/-0.15
J
0.60 +_ 0.1
K
0.55 +_ 0.1
H
G
4
3
D1
D2
1
2
TSQ
Marking
4
3
Lot No.
Type Name
G3
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
t_rr
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
V_R=80V
V_R=0, f=1MHz
I_F=10mA
1
2
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
UNIT
V
ǺA
pF
nS
2005. 6. 21
Revision No : 0
1/2