KDS160_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
hSmall Package : USC.
hLow Forward Voltage.
hFast Reverse Recovery Time.
hSmall Total capacitance.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
V_RM
85
Reverse Voltage
V_R
80
Maximum (Peak) Forward Current
I_FM
300
Average Forward Current
I_O
100
Surge Current (10mS)
I_FSM
2
Power Dissipation
P_D *
200
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
* : Mounted on a glass epoxy circuit board of 20ƒ20mm,
pad dimension of 4ƒ4mm.
UNIT
V
V
mA
mA
A
mW


KDS160
SILICON EPITAXIAL PLANAR DIODE
B
1
2
D
M
M
1. ANODE
2. CATHODE
G
H
J
C
I
DIM MILLIMETERS
A
2.50+_ 0.2
B
1.25+_ 0.05
C
0.90+_ 0.05
D
0.30 +_ 0.06
E
1.70 +_ 0.05
F
0.27 +_ 0.10
G
0.126+_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15+_ 0.05
K
0.4
L
2 +4/-2
M
4~6
USC
Marking
Type Name
UF
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
V_R=80V
V_R=0V, f=1MHz
I_F=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
UNIT
V
ǺA
pF
nS
2014. 3. 31
Revision No : 8
1/3