KDS160E Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
ᴌSmall Package : ESC.
ᴌLow Forward Voltage.
ᴌFast Reverse Recovery Time.
ᴌSmall Total capacitance.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_RM
V_R
I_FM
I_O
I_FSM
P_D
T_j
T_stg
RATING
85
80
300
100
2
-
150
-55ᴕ150
UNIT
V
V
mA
mA
A
mW
á´±
á´±
KDS160E
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
Marking
Type Name
UF
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
V_R=80V
V_R=0V, f=1MHz
I_F=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
UNIT
V
ỌA
pF
nS
2001. 12. 13
Revision No : 3
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