KDS135_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES
hHigh Reliability.
hSmall surface mounting type (USC).
KDS135
SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
V_RM
300
V_R
250
Maximum (Peak) Forward Current
I_FM
300
Average Forward Current
I_O
100
Surge Current (10mS)
I_FSM
2
Power Dissipation
P_D*
200
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
* Mounted on a glass epoxy circuit board of 20ƒ20mm,
Pad dimension of 4ƒ4mm
-55q150
UNIT
V
V
mA
mA
A
mW


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
I_R(1)
Reverse Current
I_R(2)
Total Capacitance
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=100mA
V_R=250V
V_R=300V
V_R=0V, f=1MHz
I_R=30mA, I_F=30mA
MIN.
-
-
-
-
-
TYP.
1.0
0.04
-
1.35
30
MAX.
1.2
0.2
100
3
100
UNIT
V
ǺA
pF
nS
2014. 3. 31
Revision No : 3
1/2