KDS135S_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES
hHigh Reliability.
hSmall surface mounting type (SOT-23).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL RATING
V_RM
300
V_R
250
I_FM
300
I_O
100
I_FSM
2
P_D
150
T_j
150
T_stg
-55q150
UNIT
V
V
mA
mA
A
mW


KDS135S
SILICON EPITAXIAL PLANAR DIODE
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. NC
2. ANODE
3. CATHODE
3
2
1
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
I_R(1)
Reverse Current
I_R(2)
Total Capacitance
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=100mA
V_R=250V
V_R=300V
V_R=0V, f=1MHz
I_R=30mA, I_F=30mA
MIN.
-
-
-
-
-
TYP.
1.0
0.04
-
1.35
30
MAX.
1.2
0.2
100
3
100
UNIT
V
ǺA
pF
nS
Marking
J A ^{Type Name}
Lot No.
2001. 6. 11
Revision No : 0
1/2