KDS135 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES
ᴌHigh Reliability.
ᴌSmall surface mounting type (USC).
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
V_RM
Reverse Voltage
V_R
Maximum (Peak) Forward Current
I_FM
Average Forward Current
I_O
Surge Current (10mS)
I_FSM
Power Dissipation
P_D
Junction Temperature
T_j
Storage Temperature Range
T_stg
* Mounted on a glass epoxy cirvuit board of 20á´§20mm
Pad dimension of 4á´§4mm
RATING
300
250
300
100
2
150*
150
-55ᴕ150
UNIT
V
V
mA
mA
A
mW
á´±
á´±
KDS135
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
I_R(1)
Reverse Current
I_R(2)
Total Capacitance
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=100mA
V_R=250V
V_R=300V
V_R=0V, f=1MHz
I_R=30mA, I_F=30mA
MIN.
-
-
-
-
-
TYP.
1.0
0.04
-
1.35
30
MAX.
1.2
0.2
100
3
100
UNIT
V
ỌA
pF
nS
Marking
Type Name
JA
2001. 6. 11
Revision No : 0
1/2