KDS127U_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Low Forward Voltage
Fast Reverse Recovery Time
Small Total Capacitance
Ultra- Small Surface Mount Package
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V_RM
80
V
Reverse Voltage
V_R
80
V
Maximum (Peak) Forward Current
I_FM
300 *
mA
Average Forward Current
I_O
100 *
mA
Surge Current (10ms)
I_FSM
2*
A
Power Dissipation
P_D
200**
mW
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
* Where D1, D2, D3, D4 are used independently or simultaneously,
the Maximum Ratings per diode are 50% of those of the single diode.
** Total Rating
KDS127U
SILICON EPITAXIAL PLANAR DIODE
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D _B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T 0.15+0.1/-0.05
G
1. D1 ANODE
2. D2 CATHODE
3. D3/D4 ANODE/CATHODE
4. D3 ANODE
5. D4 CATHODE
6. D1/D2 ANODE/CATHODE
US6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
D4
D3
D1 D2
1
2
3
Marking
6 54
Type Name
S7
1 23
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Forward Voltage
Reverse Current
Total Capacitance
SYMBOL
V_F
I_R
C_T
TEST CONDITION
I_F=100mA
V_R=80V
V_R=6V, f=1MHz
MIN.
-
-
-
TYP.
-
-
-
MAX.
1.2
0.1
3.5
UNIT
V
A
pF
2008. 9. 11
Revision No : 1
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