KDS127E_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
hLow Forward Voltage
hFast Reverse Recovery Time
hSmall Total Capacitance
hUltra- Small Surface Mount Package
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V_RM
80
V
Reverse Voltage
V_R
80
V
Maximum (Peak) Forward Current
I_FM
300 *
mA
Average Forward Current
I_O
100 *
mA
Surge Current (10ms)
I_FSM
2*
A
Power Dissipation
P_D
200**
mW
Junction Temperature
T_j
150

Storage Temperature Range
T_stg
-55q150 
* Where D1, D2, D3, D4 are used independently or simultaneously,
the Maximum Ratings per diode are 50% of those of the single diode.
** Total Rating
KDS127E
SILICON EPITAXIAL PLANAR DIODE
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
A1
1.0 +_ 0.05
2
5
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
E
E
0.35+_ 0.05
H
0.5+_ 0.05
P
P
J
0.12+_ 0.05
P
5
1. D1 ANODE
2. D2 CATHODE
3. D3/D4 ANODE/CATHODE
4. D3 ANODE
5. D4 CATHODE
6. D1/D2 ANODE/CATHODE
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
D4 D3
D1 D2
1
2
3
Marking
6 54
Type Name
US
Lot No.
1 23
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
Forward Voltage
Reverse Current
Total Capacitance
SYMBOL
V_F
I_R
C_T
TEST CONDITION
I_F=100mA
V_R=80V
V_R=6V, f=1MHz
MIN.
-
-
-
TYP.
-
-
-
MAX.
1.2
0.1
3.5
UNIT
V
ǺA
pF
2014. 3. 31
Revision No : 2
1/3