KDS125U_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
KDS125U
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
hSmall package : US6.
hLow forward voltage.
hFast reverse recovery time.
hSmall total capacitance.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V_RM
85
V
Reverse Voltage
V_R
80
V
Maximum (Peak) Forward Current
I_FM*
300
mA
Average Forward Current
I_O*
100
mA
Surge Current (10ms)
I_FSM*
2
A
Power Dissipation
P_D
200
mW
Junction Temperature
T_j
150

Storage Temperature Range
T_stg
-55q150 
* This is Maximum Ratings of single diode (D1 or D2 or D3 or D4).
In the case of using Unit 1 and Unit 2 independently or simultaneously,
the Maximum Ratings per diode is 75% of the single diode one.
EQUIVALENT CIRCUIT (TOP VIEW)
Unit 2
6
5
4
D4 D3
D1 D2
1
2
3
Unit 1
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D _B1
1.25+_ 0.1
C
0.65
D
0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. D1 CATHODE
2. D2 CATHODE
3. D3/D4 ANODE
4. D3 CATHODE
5. D4 CATHODE
6. D1/D2 ANODE
US6
Marking
6 54
Type Name
S5
1 23
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
V_R=80V
V_R=0V, f=1MHz
I_F=10mA
MIN.
-
-
-
-
-
-
TYP.
0.61
0.74
0.92
-
2.2
1.6
MAX.
-
-
1.20
0.5
4.0
4.0
UNIT
V
ǺA
pF
ns
2008. 9. 11
Revision No : 1
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