KDS123U_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
KDS123U
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
hLow Forward Voltage
hFast Reverse Recovery Time
hSmall Total Capacitance
hUltra- Small Surface Mount Package
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
V_RM
V_R
I_FM
I_O
80
80
300*
100*
Surge Current (10mS)
I_FSM
2*
Power Dissipation
P_D
100
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
* Unit Rating. Total Rating=Unit Ratingƒ0.7
-55q150
UNIT
V
V
mA
mA
A
mW


E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
NK
N
N
0.10 MIN
P
0.1 MAX
1. CATHODE 2
2. ANODE 1
3. ANODE 2/ CATHODE 1
3
D1 D2
2
1
USM
Marking
Lot No.
Type Name
US
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=100mA
V_R=80V
V_R=6V, f=1MHz
MIN.
-
-
-
TYP.
-
-
-
MAX.
1.2
0.1
3.5
UNIT
V
ǺA
pF
2008. 9. 8
Revision No : 1
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