KDS123S Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Low Forward Voltage
Fast Reverse Recovery Time
Small Total Capacitance
Ultra- Small Surface Mount Package
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
V_RM
V_R
I_FM
I_O
80
80
300*
100*
Surge Current (10mS)
I_FSM
2*
Power Dissipation
P_D
150
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
* Unit Rating. Total Rating=Unit Rating 0.7
UNIT
V
V
mA
mA
A
mW
KDS123S
SILICON EPITAXIAL PLANAR DIODE
E
L
B
L
2
3
1
P
P
M
1. CATHODE 2
2. ANODE 1
3. ANODE 2/CATHODE 1
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
D1
D2
2
1
SOT-23
Marking
Type Name
US
Lot. No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=100mA
V_R=80V
V_R=6V, f=1MHz
MIN.
-
-
-
TYP.
-
-
-
MAX.
1.2
0.1
3.5
UNIT
V
A
pF
2007. 10. 31
Revision No : 0
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