KDS123E_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
hLow Forward Voltage
hFast Reverse Recovery Time
hSmall Total Capacitance
hUltra- Small Surface Mount Package
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
V_RM
V_R
I_FM
I_O
80
80
300*
100*
Surge Current (10mS)
I_FSM
2*
Power Dissipation
P_D
100
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
* Unit Rating. Total Rating=Unit Ratingƒ0.7
-55q150
UNIT
V
V
mA
mA
A
mW


KDS123E
SILICON EPITAXIAL PLANAR DIODE
E
B
D
2
DIM MILLIMETERS
1
3
A
1.60+_ 0.20
B
0.85+_ 0.10
C
0.70+_ 0.10
D
0.27+_ 0.10
E
1.60+_ 0.10
F
0.39+_ 0.10
G
1.00+_ 0.10
J
H
0.50
J
0.13+_ 0.05
F
F
1. CATHODE 2
2. ANODE 1
3. ANODE 2 / CATHODE 1
3
D1
D2
2
1
ESM
Marking
US
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=100mA
V_R=80V
V_R=6V, f=1MHz
MIN.
-
-
-
TYP.
-
-
-
MAX.
1.2
0.1
3.5
UNIT
V
ǺA
pF
2014. 3. 31
Revision No : 1
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