KDS121V_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
hVery Small Package
: VSM.
hLow Forward Voltage
: V_F=0.9V (Typ.).
hFast Reverse Recovery Time : t_rr=1.6ns(Typ.).
hSmall Total Capacitance : C_T=0.9pF (Typ.).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
V_RM
Reverse Voltage
V_R
Maximum (Peak) Forward Current
I_FM
Average Forward Current
I_O
Surge Current (10ms)
I_FSM
Power Dissipation
P_D
Junction Temperature
T_j
Storage Temperature Range
T_stg
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
RATING
85
80
300 *
100 *
2*
100
150
-55q150
UNIT
V
V
mA
mA
A
mW


KDS121V
SILICON EPITAXIAL PLANAR DIODE
E
B
2
1
3
P
P
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
P
MILLIMETERS
1.2 +_0.05
0.8 +_0.05
0.5 +_ 0.05
0.3 +_ 0.05
1.2 +_ 0.05
0.8 +_ 0.05
0.40
0.12+_ 0.05
0.2 +_ 0.05
5
3
2
1
VSM
Marking
B3
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
V_R=80V
V_R=0, f=1MHz
I_F=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
UNIT
V
ǺA
pF
nS
2011. 12. 23
Revision No : 1
1/2