KDS120_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
hSmall Package
: USM.
hLow Forward Voltage
: V_F=0.92V (Typ.).
hFast Reverse Recovery Time : t_rr=1.6ns(Typ.).
hSmall Total Capacitance : C_T=2.2pF (Typ.).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
V_RM
Reverse Voltage
V_R
Maximum (Peak) Forward Current
I_FM
Average Forward Current
I_O
Surge Current (10ms)
I_FSM
Power Dissipation
P_D
Junction Temperature
T_j
Storage Temperature Range
T_stg
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
RATING
85
80
300 *
100 *
2*
100
150
-55q150
UNIT
V
V
mA
mA
A
mW


KDS120
SILICON EPITAXIAL TYPE DIODE
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
N
K
N
N
0.10 MIN
P
0.1 MAX
1. CATHODE 1
2. CATHODE 2
3. ANODE
3
2
1
USM
Marking
Type Name
A3
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
V_R=80V
V_R=0, f=1MHz
I_F=10mA
MIN.
-
-
-
-
-
-
TYP.
0.61
0.74
0.92
-
2.2
1.6
MAX.
-
-
1.20
0.5
4.0
4.0
UNIT
V
ǺA
pF
nS
2008.9. 8
Revision No : 4
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