KDS120E_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
hSmall Package
: ESM.
hLow Forward Voltage
: V_F=0.92V (Typ.).
hFast Reverse Recovery Time : t_rr=1.6ns(Typ.).
hSmall Total Capacitance : C_T=2.2pF (Typ.).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
V_RM
Reverse Voltage
V_R
Maximum (Peak) Forward Current
I_FM
Average Forward Current
I_O
Surge Current (10ms)
I_FSM
Power Dissipation
P_D
Junction Temperature
T_j
Storage Temperature Range
T_stg
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
RATING
85
80
300 *
100 *
2*
100
150
-55q150
UNIT
V
V
mA
mA
A
mW


KDS120E
SILICON EPITAXIAL TYPE DIODE
E
B
D
2
DIM MILLIMETERS
1
3
A
1.60+_ 0.20
B
0.85+_ 0.10
C
0.70+_ 0.10
D
0.27+_ 0.10
E
1.60+_ 0.10
F
0.39+_ 0.10
G
1.00+_ 0.10
J
H
0.50
J
0.13+_ 0.05
F
F
1. CATHODE 1
2. CATHODE 2
3. ANODE
3
2
1
ESM
Marking
A3
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
V_R=80V
V_R=0, f=1MHz
I_F=10mA
MIN.
-
-
-
-
-
-
TYP.
0.61
0.74
0.92
-
2.2
1.6
MAX.
-
-
1.20
0.5
4.0
4.0
UNIT
V
ǺA
pF
nS
2014. 3. 31
Revision No : 3
1/2