KDS115_08 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
Small Package.
Small Total Capacitance : C_T=1.2pF(Max.).
Low Series Resistance : r_S=0.6 (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Forward Current
I_F
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
30
50
125
-55 125
UNIT
V
mA
KDS115
SILICON EPITAXIAL PLANAR DIODE
E
M
B
M
2
1
N
K
DIM MILLIMETERS
D
A
B
2.00+_ 0.20
1.25 +_ 0.15
C
0.90 +_ 0.10
3
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
J
1.30
K
0.00-0.10
L
0.70
H
M
0.42+_ 0.10
N
0.10 MIN
N
1. CATHODE 1
2. ANODE 2
3. ANODE1/ CATHODE 2
3
2
1
USM
Marking
Type Name
R3
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Reverse Voltage
V_R
Total Capacitance
C_T
Series Resistance
r_s
TEST CONDITION
I_F=2mA
V_R=15V
I_R=1 A
V_R=6V, f=1MHz
I_F=2mA, f=100MHz
MIN.
-
-
30
-
-
TYP.
-
-
-
0.8
0.6
MAX.
0.85
0.1
-
1.2
0.9
UNIT
V
A
V
pF
2008. 9. 8
Revision No : 2
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