KDS114V_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
KDS114V
SILICON EPITAXIAL PLANAR DIODE
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
hSmall Package.
hSmall Total Capacitance : C_T=1.2pF(Max.).
hLow Series Resistance : r_S=0.5ʃ(Typ.).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Forward Current
I_F
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
35
100
150
-55q150
UNIT
V
mA


CATHODE MARK
2
1
B
DIM MILLIMETERS
A
A
1.4Ź0.05
B
1.0Ź0.05
C
0.6Ź0.05
D
0.28Ź0.03
E
0.5Ź0.05
F
0.12Ź0.03
1. ANODE
2. CATHODE
VSC
Marking
Type Name
P1
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Reverse Voltage
V_R
Total Capacitance
C_T
Series Resistance
r_s
TEST CONDITION
I_F=2mA
V_R=15V
I_R=1ǺA
V_R=6V, f=1MHz
I_F=2mA, f=100MHz
MIN.
-
-
35
-
-
TYP.
-
-
-
0.7
0.5
MAX.
0.85
0.1
-
1.2
0.9
UNIT
V
ǺA
V
pF
ʃ
2005. 3. 28
Revision No : 0
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