KDS112_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
hSmall Package.
hSmall Total Capacitance : C_T=1.2pF(Max.).
hLow Series Resistance : r_S=0.6ʃ(Typ.).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Forward Current
I_F
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
30
50
125
-55q125
UNIT
V
mA


KDS112
SILICON EPITAXIAL TYPE DIODE
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
NK
N
N
0.10 MIN
P
0.1 MAX
1. ANODE 1
2. ANODE 2
3. CATHODE
3
2
1
USM
Marking
Type Name
BF
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Reverse Voltage
V_R
Total Capacitance
C_T
Series Resistance
r_s
TEST CONDITION
I_F=2mA
V_R=15V
I_R=1ǺA
V_R=6V, f=1MHz
I_F=2mA, f=100MHz
MIN.
-
-
30
-
-
TYP.
-
-
-
0.8
0.6
MAX.
0.85
0.1
-
1.2
0.9
UNIT
V
ǺA
V
pF
ʃ
2008. 9. 8
Revision No : 2
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