KDS112V Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
ᴌVery Small Package.
ᴌSmall Total Capacitance : C_T=1.2pF(Max.).
ᴌLow Series Resistance : r_S=0.6ή(Typ.).
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Reverse Voltage
Forward Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_R
I_F
T_j
T_stg
RATING
30
50
125
-55ᴕ125
UNIT
V
mA
á´±
á´±
KDS112V
SILICON EPITAXIAL TYPE DIODE
E
B
2
1
3
P
P
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
P
MILLIMETERS
1.2 +_0.05
0.8 +_0.05
0.5 +_ 0.05
0.3 +_ 0.05
1.2 +_ 0.05
0.8 +_ 0.05
0.40
0.12+_ 0.05
0.2 +_ 0.05
5
3
2
1
VSM
Marking
BF
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Reverse Voltage
V_R
Total Capacitance
C_T
Series Resistance
r_s
TEST CONDITION
I_F=2mA
V_R=15V
I_R=1ỌA
V_R=6V, f=1MHz
I_F=2mA, f=100MHz
MIN.
-
-
30
-
-
TYP.
-
-
-
0.8
0.6
MAX.
0.85
0.1
-
1.2
0.9
UNIT
V
ỌA
V
pF
á½µ
2001. 7. 24
Revision No : 0
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