KDS112E_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
hSmall Package.
hSmall Total Capacitance : C_T=1.2pF(Max.).
hLow Series Resistance : r_S=0.6ʃ(Typ.).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Forward Current
I_F
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
30
50
125
-55q125
UNIT
V
mA


KDS112E
SILICON EPITAXIAL TYPE DIODE
E
B
2
1
3
F
F
1. ANODE 1
2. ANODE 2
3. CATHODE
D
DIM MILLIMETERS
A
1.60+_ 0.20
B
0.85+_ 0.10
C
0.70+_ 0.10
D
0.27+_ 0.10
E
1.60+_ 0.10
F
0.39+_ 0.10
G
1.00+_ 0.10
J
H
0.50
J
0.13+_ 0.05
3
2
1
ESM
Marking
BF
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Reverse Voltage
V_R
Total Capacitance
C_T
Series Resistance
r_s
TEST CONDITION
I_F=2mA
V_R=15V
I_R=1ǺA
V_R=6V, f=1MHz
I_F=2mA, f=100MHz
MIN.
-
-
30
-
-
TYP.
-
-
-
0.8
0.6
MAX.
0.85
0.1
-
1.2
0.9
UNIT
V
ǺA
V
pF
ʃ
2014. 3. 31
Revision No : 2
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