KDR735T Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING.
FEATURES
Low Reverse Current : I_R=0.1 A(Typ.)
High Reliability.
Small Package : TSQ.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Reverse Voltage
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
V_R
30
I_O*
200
I_FSM*
1
P_D**
900
T_j
125
Storage Temperature Range
T_stg
-40 125
* Unit rating. (Total rating = Unit rating 1.5)
** Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT
V
mA
A
mW
KDR735T
SCHOTTKY BARRIER TYPE DIODE
E
B
1
4
2
3
DIM MILLIMETERS
A
2.9+_ 0.2
B
1.6+0.2/-0.1
C
0.70+_ 0.05
D
0.4+_ 0.1
E
2.8+0.2/-0.3
F
1.9+_ 0.2
G
0.16 +_ 0.05
H
0.00-0.10
I
0.25+0.3/-0.15
J
0.60 +_ 0.1
K
0.55 +_ 0.1
H
G
1. D1 ANODE
2. D2 ANODE
3. D2 CATHODE
4. D1 CATHODE
4
D1
1
3
D2
2
TSQ
Marking
4
3
Type Name
R3
Lot No.
1
2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
TEST CONDITION
I_F=200mA
V_R=10V
MIN.
-
-
TYP.
-
-
MAX.
0.60
1.0
UNIT
V
A
2006. 2. 15
Revision No : 0
1/2