KDR730E_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING.
FEATURES
hLow Reverse Current : I_R=0.1ǺA(Typ.)
hHigh Reliability.
hSmall Package : ESC.
KDR730E
SCHOTTKY BARRIER TYPE DIODE
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Reverse Voltage
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
V_R
30
I_O
200
I_FSM
1
P_D
150^*
T_j
125
Storage Temperature Range
T_stg
-40q125
* : Mounted on a glass epoxy circuit board of 20ƒ20mm,
pad dimension of 4ƒ4mm.
UNIT
V
mA
A
mW


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
TEST CONDITION
I_F=200mA
V_R=10V
MIN.
-
-
TYP.
-
-
MAX.
0.60
1.0
UNIT
V
ǺA
2014. 3. 31
Revision No : 1
1/2