KDR729_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
hLow Forward Voltage : V_F(4)=0.43V(Typ.)
hI_O=200mA rectification possible.
hSmall Package : USC.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
V_RM
V_R
I_FM
I_O
I_FSM
P_D
30
30
300
200
1
200*
Junction Temperature
T_j
125
Storage Temperature Range
T_stg
-55q125
* : Mounted on a glass epoxy circuit board of 20ƒ20mm,
pad dimension of 4ƒ4mm.
UNIT
V
V
mA
mA
A
mW


KDR729
SCHOTTKY BARRIER TYPE DIODE
B
1
2
D
M
M
1. ANODE
2. CATHODE
G
H
J
C
I
DIM MILLIMETERS
A
2.50+_ 0.2
B
1.25+_ 0.05
C
0.90+_ 0.05
D
0.30 +_ 0.06
E
1.70 +_ 0.05
F
0.27 +_ 0.10
G
0.126+_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15+_ 0.05
K
0.4
L
2 +4/-2
M
4~6
USC
Marking
UM
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
V_F(1)
Forward Voltage
Reverse Current
V_F(2)
V_F(3)
V_F(4)
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
I_F=200mA
V_R=30V
V_R=0V, f=1MHz
MIN.
-
-
-
-
-
-
TYP.
0.22
0.29
0.38
0.43
-
50
MAX.
-
-
-
0.55
50
-
UNIT
V
ǺA
pF
2014. 3. 31
Revision No : 7
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