KDR720S Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)

SEMICONDUCTOR
TECHNICAL DATA
For high speed switching circuit.
For small current rectification.
FEATURES
Low Forward Voltage : V_F=0.55V(Max).
I_O=200mA recification possible.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive peak surge current
Junction Temperature
Storage Temperature
SYMBOL
V_RRM
V_R
I_O
I_FSM
T_j
T_stg
RATING
30
30
0.2
1
125
-55 125
UNIT
V
V
A
A
KDR720S
SCHOTTKY BARRIER TYPE DIODE
E
L
B
L
2
3
1
P
P
M
1. CATHODE 1
2. CATHODE 2
3. ANODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
SOT-23
Marking
MG ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Total Capacitance
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=0.2A
V_R=30V
V_R=0V, f=1MHz
I_R=I_F=10mA
MIN.
-
-
-
-
TYP.
-
-
30
3
MAX.
0.55
50
-
-
UNIT
V
A
pF
nS
2003. 2. 25
Revision No : 1
1/2