KDR720E_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
For high speed switching circuit.
For small current rectification.
FEATURES
hLow Forward Voltage : V_F=0.55V(Max).
hI_O=200mA recification possible.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Average Forward Current
I_O
Forword Surge Current
I_FSM
Power Dissipation
P_D
Junction Temperature
T_j
Storage Temperature
T_stg
* Mounted on a glass epoxy circuit board of 20
pad dimension of 4
RATING
30
200
1
150*
125
-40q125
UNIT
V
mA
A
mW


KDR720E
SCHOTTKY BARRIER TYPE DIODE
C
E
1
2
D
1. ANODE
2. CATHODE
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
Marking
Type Name
UB
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
TEST CONDITION
I_F=200mA
V_R=10V
MIN.
-
-
TYP.
-
-
MAX.
0.50
30
UNIT
V
ǺA
2014. 3. 31
Revision No : 3
1/2