KDR701S_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
For High frequency rectification
FEATURES
hLow Forward Voltage : V_F max=0.55V.
hI_R=700mA recification possible.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive peak surge current
Junction Temperature
Storage Temperature
SYMBOL
V_RRM
V_R
I_O
I_FSM
T_j
T_stg
RATING
30
30
0.7
5
125
-55q125
UNIT
V
V
A
A


KDR701S
SCHOTTKY BARRIER TYPE DIODE
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. NC
2. ANODE
3. CATHODE
3
2
1
SOT-23
Marking
DK ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Forward Voltage
V_F
Reverse Current
I_R
Total Capacitance
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_R=1mA
I_F=0.7A
V_R=30V
V_R=0V, f=1MHz
I_R=I_F=100mA
MIN.
30
-
-
-
-
TYP.
-
-
-
190
7.5
MAX.
-
0.55
80
-
-
UNIT
V
V
ǺA
pF
nS
2003. 2. 25
Revision No : 1
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