KDR582F Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
FOR HIGH SPEED SWITCHING.
KDR582F
SCHOTTKY BARRIER TYPE DIODE
FEATURES
hLow reverse current, low capacitance.
CATHODE MARK
2
1
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Reverse Voltage
V_R
5
V
Average Forward Current
I_O
10
mA
Surge Current (10ms)
I_FSM
130
mA
Power Dissipation
P_D*
100
mW
Junction Temperature
T_j
150

Storage Temperature Range
T_stg
-55q150 
* Mounted on a glass epoxy circuit board of 20ƒ20ɘ, Pad Dimension of 4ƒ4ɘ
B
DIM MILLIMETERS
A
1.00+_ 0.05
A
B 0.80+0.10/-0.05
C
0.60+_ 0.05
D
0.30+_ 0.05
E
0.40 MAX
F
0.13+_ 0.05
1. ANODE
2. CATHODE
TFSC
Marking
Type Name
M
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Total Capacitance
C_T
Series Resistance
r_S
TEST CONDITION
I_F=0.1mA
I_F=1mA
I_F=10mA
V_R=3V
V_R=3V, T_A=60
V_R=0V, f=1MHz
I_F=5mA, f=10kHz
MIN.
0.2
0.25
0.35
-
-
0.4
-
TYP.
-
-
-
-
-
-
-
MAX.
0.35
0.45
0.6
0.25
1.25
0.75
15
UNIT
V
ǺA
pF
ʃ
2012. 6. 22
Revision No : 0
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