KDR582E Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
FOR HIGH SPEED SWITCHING.
FEATURES
Low reverse current, low capacitance.
Small package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V_R
4
V
Reverse Voltage
V_R
4
V
Forward Current
I_F
130
mA
Power Dissipation
P_D*
150
mW
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
* Mounted on a glass epoxy circuit board of 20 20 , Pad Dimension of 4 4
KDR582E
SCHOTTKY BARRIER TYPE DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
Marking
Type Name
S4
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Total Capacitance
C_T
Series Resistance
r_S
TEST CONDITION
I_F=0.1mA
I_F=1mA
I_F=10mA
V_R=3V
V_R=3V, T_A=60
V_R=0V, f=1MHz
I_F=5mA, f=10kHz
MIN.
0.2
0.25
0.35
-
-
0.4
-
TYP.
-
-
-
-
-
-
-
MAX.
0.35
0.45
0.6
0.25
1.25
0.75
15
UNIT
V
A
pF
2006. 11. 23
Revision No : 0
1/2