KDR511T Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION, SWITCHING, REGULATORS, CONVERTERS, CHOPPERS)

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY RECTIFICATION.
SWITCHING REGULATORS, CONVERTERS, CHOPPERS.
FEATURES
Low Forward Voltage : V_F max=0.4V.
Low Leakage Current : I_R max=500 A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-Repetitive Peak Surge Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_RRM
V_R
I_O
I_FSM
T_j
T_stg
RATING
15
15
1
10
125
-55 125
UNIT
V
V
A
A
KDR511T
SCHOTTKY BARRIER TYPE DIODE
E
K
B
K
2
3
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. NC
2. ANODE
3. CATHODE
2
3
1
TSM
Marking
T 1 ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Total Capacitance
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=0.5A
I_F=1A
V_R=10V
V_R=15V
V_R=10V, f=1MHz
I_F=I_R=100mA
MIN.
-
-
-
-
-
-
TYP.
0.30
0.35
-
-
42
-
MAX.
0.35
0.40
500
1000
-
15
UNIT
V
V
A
pF
nS
2003. 8. 4
Revision No : 1
1/2