KDR412_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
KDR412
SCHOTTKY BARRIER TYPE DIODE
LOW POWER RECTIFICATION
FOR SWITCHING POWER SUPPLY.
FEATURES
hSmall Surface Mounting Type. (USC)
hLow Forward Voltage : V_F max=0.5V
hHigh Reliability
CONSTRUCTION
hSilicon epitaxial planar.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Peak Reverse Voltage
DC Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_RM
V_R
I_O
I_FSM
T_j
T_stg
RATING
40
20
0.5
3
125
-40q+125
UNIT
V
V
A
A


B
1
2
D
M
M
1. ANODE
2. CATHODE
G
H
J
C
I
DIM MILLIMETERS
A
2.50+_ 0.2
B
1.25+_ 0.05
C
0.90+_ 0.05
D
0.30 +_ 0.06
E
1.70 +_ 0.05
F
0.27 +_ 0.10
G
0.126+_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15+_ 0.05
K
0.4
L
2 +4/-2
M
4~6
USC
Marking
Lot No.
Type Name
U3
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
V_F (1)
V_F (2)
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=10mA
I_F=500mA
V_R=10V
V_R=10V, f=1MHz
MIN.
-
-
-
-
TYP.
-
-
-
20
MAX.
0.3
0.5
30
-
UNIT
V
V
ǺA
pF
2014. 3. 31
Revision No : 4
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