KDR412 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE(LOW POWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)

SEMICONDUCTOR
TECHNICAL DATA
LOW POWER RECTIFICATION
FOR SWITCHING POWER SUPPLY.
FEATURES
Small Surface Mounting Type. (USC)
Low Forward Voltage : V_F max=0.5V
High Reliability
CONSTRUCTION
Silicon epitaxial planar.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Peak Reverse Voltage
DC Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_RM
V_R
I_O
I_FSM
T_j
T_stg
RATING
40
20
0.5
3
125
-40 +125
UNIT
V
V
A
A
KDR412
SCHOTTKY BARRIER TYPE DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
Marking
Type Name
U3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
V_F (1)
V_F (2)
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=10mA
I_F=500mA
V_R=10V
V_R=10V, f=1MHz
MIN.
-
-
-
-
TYP.
-
-
-
20
MAX.
0.3
0.5
30
-
UNIT
V
V
A
pF
2002. 10. 2
Revision No : 2
1/2