KDR411_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
KDR411
SCHOTTKY BARRIER TYPE DIODE
LOW POWER RECTIFICATION
FOR SWITCHING POWER SUPPLY.
FEATURES
hSmall Surface Mounting Type. (USM)
hLow Forward Voltage : V_F max=0.5V
hHigh Reliability
CONSTRUCTION
hSilicon epitaxial planar.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Peak Reverse Voltage
DC Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_RM
V_R
I_O
I_FSM
T_j
T_stg
RATING
40
20
0.5
3
125
-40q+125
UNIT
V
V
A
A


E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
N
K
N
N
0.10 MIN
P
0.1 MAX
1. NC
2. ANODE
3. CATHODE
3
2
1
USM
Marking
Lot No.
Type Name
U3
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
V_F (1)
V_F (2)
I_R
C_T
TEST CONDITION
I_F=10mA
I_F=500mA
V_R=10V
V_R=10V, f=1MHz
MIN.
-
-
-
-
TYP.
-
-
-
20
MAX.
0.3
0.5
30
-
UNIT
V
V
ǺA
pF
2008. 9. 8
Revision No : 4
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