KDR411S_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
LOW POWER RECTIFICATION
FOR SWITCHING POWER SUPPLY.
FEATURES
hSmall Surface Mounting Type. (SOT-23)
hLow Forward Voltage : V_F max=0.5V
hHigh Reliability
CONSTRUCTION
hSilicon epitaxial planar.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Peak Reverse Voltage
DC Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_RM
V_R
I_O
I_FSM
T_j
T_stg
RATING
40
20
0.5
3
125
-40q+125
UNIT
V
V
A
A


KDR411S
SCHOTTKY BARRIER TYPE DIODE
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. NC
2. ANODE
3. CATHODE
3
2
1
SOT-23
Marking
U 3 ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F (1)
V_F (2)
Reverse Current
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=10mA
I_F=500mA
V_R=10V
V_R=10V, f=1MHz
MIN.
-
-
-
-
TYP.
-
-
-
20
MAX.
0.3
0.5
30
-
UNIT
V
V
ǺA
pF
2002. 10. 2
Revision No : 1
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