KDR411 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE(LOW PWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)

SEMICONDUCTOR
TECHNICAL DATA
LOW POWER RECTIFICATION
FOR SWITCHING POWER SUPPLY.
FEATURES
Small Surface Mounting Type. (USM)
Low Forward Voltage : V_F max=0.5V
High Reliability
CONSTRUCTION
Silicon epitaxial planar.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Peak Reverse Voltage
DC Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_RM
V_R
I_O
I_FSM
T_j
T_stg
RATING
40
20
0.5
3
125
-40 +125
UNIT
V
V
A
A
KDR411
SCHOTTKY BARRIER TYPE DIODE
E
MB
M
2
1
3
N
K
N
1. NC
2. ANODE
3. CATHODE
DIM MILLIMETERS
D
A
B
2.00+_ 0.20
1.25+_ 0.15
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
J
1.30
K
0.00-0.10
L
0.70
H
M
0.42+_ 0.10
N
0.10 MIN
3
2
1
USM
Marking
U3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
V_F (1)
V_F (2)
I_R
C_T
TEST CONDITION
I_F=10mA
I_F=500mA
V_R=10V
V_R=10V, f=1MHz
MIN.
-
-
-
-
TYP.
-
-
-
20
MAX.
0.3
0.5
30
-
UNIT
V
V
A
pF
2003. 2. 24
Revision No : 3
1/2