KDR378_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES
hLow Forward Voltage : V_F=0.24(Typ.) I_F=5mA
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Repetitive Peak Reverse Voltage
Reverse Voltage
V_RRM
15
V_R
10
Average Forward Current
I_O
0.1
Non-repetitive Peak Surge Current
I_FSM
1
Power Dissipation
P_D
200*
Junction Temperature
T_j
125
Storage Temperature Range
T_stg
* : Mounted on a glass epoxy circuit board of 20ƒ20mm,
pad dimension of 4ƒ4mm.
-55q125
UNIT
V
V
A
A
mW


KDR378
SCHOTTKY BARRIER TYPE DIODE
E
M
B
M
2
1
3
N
K
N
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM MILLIMETERS
D
A
B
2.00+_ 0.20
1.25 +_ 0.15
C
0.90 +_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
J
1.30
K
0.00-0.10
L
0.70
H
M
0.42+_ 0.10
N
0.10 MIN
3
2
1
USM
Marking
Type Name
X3
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F(1)
V_F(2)
V_F(3)
Reverse Current
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=1mA
I_F=5mA
I_F=100mA
V_R=10V
V_R=0V, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.19
0.24
0.39
-
14
MAX.
-
-
0.50
20
30
UNIT
V
ǺA
pF
2008. 9 .11
Revision No : 3
1/2