KDR378E Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES
ᴌLow Forward Voltage : V_F=0.24(Typ.) I_F=5mA
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive Peak Surge Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_RRM
V_R
I_O
I_FSM
P_D
T_j
T_stg
RATING
15
10
0.1
1
100
125
-55ᴕ125
UNIT
V
V
A
A
mW
á´±
á´±
KDR378E
SCHOTTKY BARRIER TYPE DIODE
E
B
2
1
3
DIM MILLIMETERS
D
A
1.60+_ 0.10
B
0.85+_ 0.10
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00+_ 0.10
H
0.50
J
0.13+_ 0.05
J
1. ANODE 1
2. ANODE 2
3. CATHODE
3
2
1
ESM
Marking
X3
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
V_F(1)
V_F(2)
V_F(3)
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=1mA
I_F=5mA
I_F=100mA
V_R=10V
V_R=0V, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.19
0.24
0.39
-
14
MAX.
-
-
0.50
20
30
UNIT
V
ỌA
pF
2001. 6. 7
Revision No : 1
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