KDR377E_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
hLow Forward Voltage : V_F(2)=0.43V (Typ.)
hSmall Package : ESC.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
V_RM
40
Reverse Voltage
V_R
40
Maximum (Peak) Forward Current
I_FM
150
Average Forward Current
I_O
30
Surge Current (10ms)
I_FSM
200
Power Dissipation
P_D
150*
Junction Temperature
T_j
125
Storage Temperature Range
T_stg
-55q125
* : Mounted on a glass epoxy circuit board of 20ƒ20mm,
pad dimension of 4ƒ4mm.
UNIT
V
V
mA
mA
mA
mW


KDR377E
SCHOTTKY BARRIER TYPE DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
Marking
Type Name
UV
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F(1)
V_F(2)
Reverse Current
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=1mA
I_F=30mA
V_R=40V
V_R=1V, f=1MHz
MIN.
-
-
-
-
TYP.
0.29
0.43
-
6.0
MAX.
0.37
0.55
20
-
UNIT
V
ǺA
pF
2014. 3. 31
Revision No : 4
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