KDR367E_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
hLow Forward Voltage : V_F(2)=0.23V (Typ.)
hSmall Package : ESC.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
V_RM
15
V_R
10
Maximum (Peak) Forward Current
I_FM
200
Average Forward Current
I_O
100
Surge Current (10ms)
I_FSM
1
Power Dissipation
P_D
150*
Junction Temperature
T_j
125
Storage Temperature Range
T_stg
-55q125
* : Mounted on a glass epoxy circuit board of 20ƒ20mm,
pad dimension of 4ƒ4mm.
UNIT
V
V
mA
mA
A
mW


KDR367E
SCHOTTKY BARRIER TYPE DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
Marking
Type Name
US
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
V_F(1)
V_F(2)
V_F(3)
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=1mA
I_F=5mA
I_F=100mA
V_R=10V
V_R=0V, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.18
0.23
0.35
-
20
MAX.
-
0.30
0.50
20
40
UNIT
V
ǺA
pF
2014. 3. 31
Revision No : 2
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