KDR367 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V_F(2)=0.23V (Typ.)
Small Package : USC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
V_RM
15
Reverse Voltage
V_R
10
Maximum (Peak) Forward Current
I_FM
200
Average Forward Current
I_O
100
Surge Current (10ms)
I_FSM
1
Power Dissipation
P_D
200*
Junction Temperature
T_j
125
Storage Temperature Range
T_stg
-55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT
V
V
mA
mA
A
mW
KDR367
SCHOTTKY BARRIER TYPE DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
Marking
Type Name
US
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
V_F(1)
V_F(2)
V_F(3)
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=1mA
I_F=5mA
I_F=100mA
V_R=10V
V_R=0V, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.18
0.23
0.35
-
20
MAX.
-
0.30
0.50
20
40
UNIT
V
A
pF
2003. 2. 25
Revision No : 2
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