KDR357_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
hLow Forward Voltage : V_F(3)=0.43V(Typ.)
hLow Reverse Current : I_R=5ɵ(Max.)
hSmall Package : USC.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
V_RM
45
V
V_R
40
V
I_FM
200
mA
I_O
100
mA
I_FSM
1
A
P_D
200^*
mW
T_j
125

Storage Temperature Range
T_stg
-55q125 
* : Mounted on a glass epoxy circuit board of 20ƒ20mm,
pad dimension of 4ƒ4mm.
KDR357
SCHOTTKY BARRIER TYPE DIODE
B
1
2
D
M
M
1. ANODE
2. CATHODE
G
H
J
C
I
DIM MILLIMETERS
A
2.50+_ 0.2
B
1.25+_ 0.05
C
0.90+_ 0.05
D
0.30 +_ 0.06
E
1.70 +_ 0.05
F
0.27 +_ 0.10
G
0.126+_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15+_ 0.05
K
0.4
L
2 +4/-2
M
4~6
USC
Marking
Type Name
UL
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
V_F(1)
Forward Voltage
V_F(2)
V_F(3)
Reverse Current
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
V_R=40V
V_R=0V, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.24
0.31
0.43
-
30
MAX.
-
-
0.55
5
-
UNIT
V
ǺA
pF
2014. 3. 31
Revision No : 6
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