KDR331 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
HIGH SPEED SWITCHING.
FEATURES
ᴌLow Forward Voltage : V_F=0.25(Typ.) @I_F=5mA
ᴌSmall Package : USM.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
V_RM
Reverse Voltage
V_R
Maximum (Peak) Forward Current
I_FM
Average Forward Current
I_O
Surge Current (10ms)
I_FSM
Power Dissipation
P_D
Junction Temperature
T_j
Storage Temperature Range
T_stg
Operating Temperature Range
T_opr
* : Unit Rating. Total Rating=Unit Ratingá´§1.5
RATING
15
10
100 *
50 *
1*
100
125
-55ᴕ125
-40ᴕ100
UNIT
V
V
mA
mA
A
mW
á´±
á´±
á´±
KDR331
SCHOTTKY BARRIER TYPE DIODE
E
M
B
M
2
1
3
N
K
N
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM MILLIMETERS
D
A
B
2.00+_ 0.20
1.25 +_ 0.15
C
0.90 +_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
J
1.30
K
0.00-0.10
L
0.70
H
M
0.42+_ 0.10
N
0.10 MIN
3
2
1
USM
Marking
Type Name
UW
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
V_F(1)
V_F(2)
V_F(3)
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=1mA
I_F=5mA
I_F=50mA
V_R=10V
V_R=0V, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.21
0.25
0.35
-
13
MAX.
-
0.30
0.50
20
40
UNIT
V
ỌA
pF
2001. 11. 29
Revision No : 1
1/2