KDR322 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
ᴌLow Forward Voltage : V_F=0.54V (Typ.).
ᴌLow Reverse Current : I_R=5ỌA (Max.).
ᴌSmall Package : USM.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_RM
V_R
I_FM
I_O
P_D
T_j
T_stg
RATING
45
40
300
100
100
125
-55ᴕ125
UNIT
V
V
mA
mA
mW
á´±
á´±
KDR322
SILICON EPITAXIAL
SCHOTTKY BARRIER TYPE DIODE
E
M
B
M
2
1
3
N
K
N
1. N.C
2. ANODE
3. CATHODE
DIM MILLIMETERS
D
A
B
2.00+_ 0.20
1.25 +_ 0.15
C
0.90 +_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
J
1.30
K
0.00-0.10
L
0.70
H
M
0.42+_ 0.10
N
0.10 MIN
3
2
1
USM
Marking
UL
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
V_F (1)
V_F (2)
V_F (3)
I_R
Total Capacitance
C_T
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=100mA
V_R=40V
V_R=0, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.28
0.36
0.54
-
18
MAX.
-
-
0.60
5
25
UNIT
V
ỌA
pF
2001. 12. 4
Revision No : 2
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