KDR105S_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
High frequency rectification
(Switching regulators, converters, choppers)
FEATURES
hLow Forward Voltage : V_F max=0.55V.
hLow Leakage Current : I_R max=10ǺA.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive Peak Surge Current
Junction Temperature
Storage Temperature
SYMBOL RATING
V_RRM
50
V_R
50
I_O
0.1
I_FSM
2
T_j
125
T_stg
-55q125
UNIT
V
V
A
A


KDR105S
SCHOTTKY BARRIER TYPE DIODE
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. NC
2. ANODE
3. CATHODE
3
2
1
SOT-23
Marking
DL ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Forward Voltage
V_F
Reverse Current
I_R
Total Capacitance
C_T
TEST CONDITION
I_R=50ǺA
I_F=0.1A
V_R=25V
V_R=10V, f=1MHz
MIN.
50
-
-
-
TYP.
-
-
-
7.7
MAX.
-
0.55
10
-
UNIT
V
V
ǺA
pF
2012. 2. 24
Revision No : 2
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