KDR105S Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)

SEMICONDUCTOR
TECHNICAL DATA
High frequency rectification
(Switching regulators, converters, choppers)
FEATURES
Low Forward Voltage : V_F max=0.55V.
Low Leakage Current : I_R max=10 A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive Peak Surge Current
Junction Temperature
Storage Temperature
SYMBOL
V_RRM
V_R
I_O
I_FSM
T_j
T_stg
RATING
50
50
0.1
2
125
-55 125
UNIT
V
V
A
A
KDR105S
SCHOTTKY BARRIER TYPE DIODE
E
L
B
L
2
3
1
P
P
M
1. NC
2. ANODE
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
SOT-23
Marking
DL ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Forward Voltage
V_F
Reverse Current
I_R
Total Capacitance
C_T
TEST CONDITION
I_R=50 A
I_F=0.1A
V_R=25V
V_R=10V, f=1MHz
MIN.
50
-
-
-
TYP.
-
-
-
7.7
MAX.
-
0.55
10
-
UNIT
V
V
A
pF
2003. 2. 25
Revision No : 1
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