KDR105 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)

SEMICONDUCTOR
TECHNICAL DATA
High frequency rectification
(Switching regulators, converters, choppers)
FEATURES
Low Forward Voltage : V_F max=0.55V.
Low Leakage Current : I_R max=10 A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive Peak Surge Current
Junction Temperature
Storage Temperature
SYMBOL
V_RRM
V_R
I_O
I_FSM
T_j
T_stg
RATING
50
50
0.1
2
125
-55 125
UNIT
V
V
A
A
KDR105
SCHOTTKY BARRIER TYPE DIODE
E
M
B
2
1
NK
M
DIM MILLIMETERS
D
A
B
2.00+_ 0.20
1.25+_ 0.15
C
0.90+_ 0.10
3
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
J
1.30
K
0.00-0.10
L
0.70
H
M
0.42+_ 0.10
N
0.10 MIN
N
1. NC
2. ANODE
3. CATHODE
3
2
1
USM
Marking
DL
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
V_R
Forward Voltage
V_F
Reverse Current
I_R
Total Capacitance
C_T
TEST CONDITION
I_R=50 A
I_F=0.1A
V_R=25V
V_R=10V, f=1MHz
MIN.
50
-
-
-
TYP.
-
-
-
7.7
MAX.
-
0.55
10
-
UNIT
V
V
A
pF
2003. 2. 25
Revision No : 2
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